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| RB160A30 Diodes Schottky barrier diode RB160A30 Applications General rectification External dimensions (Unit : mm) 0.40.1 Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. T-31 291 2.70.3 T-31 291 1.80.2 ROHM : MSR Manufacture Date Construction Silicon epitaxial planar Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol Standard dimension value(mm) B C L1 H1 F L2 D T-31 52.41.5 +0.4 T-32 26.0 0 T-31 5.00.5 B T-31 5.00.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A1.2 E T-32 1/2A0.4 T-31 0.7 T-32 0.2 max. T-31 H1 6.00.5 T-32 T-31 H2 5.00.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. H1(6mm)BROWN Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak t=100s Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 1 70 150 -55 to +150 Unit V V A A (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Forward voltagae Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.33 20 Typ. 0.43 9.00 Max. 0.48 50 Unit V A kV Conditions IF=1.0A VR=30V C=100pF,R=1.5k, forward and reverse : 1 time Rev.A 1/3 RB160A30 Diodes Electrical characteristic curves (Ta=25C) 1 Ta=75 10000 1000 Ta=75 100 10 1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 Ta=125 1000 f=1MHz 0.1 Ta=25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100 Ta=-25 0.01 Ta=-25 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 450 100 Ta=25 IF=1A n=30pcs 90 Ta=25 VR=30V n=30pcs 400 390 Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 440 80 70 60 50 40 30 20 10 AVE:8.172uA 380 370 360 350 340 330 320 310 300 AVE:324.4pF 430 420 AVE:424.2mV 410 400 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 150 Ifsm 1cyc 20 100 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 AVE:11.7ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 50 AVE:98.0A 0 0 trr DISPERSION MAP IFSM DISRESION MAP Mounted on epoxy board 150 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) IF=0.5A Rth(j-l) 100 Rth(j-a) 1 0.8 D=1/2 DC PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 FORWARD POWER DISSIPATION:Pf(W) IM=1mA time(s) td=300us 0.6 0.4 0.2 Sin(180) Rth(j-c) 10 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0.01 0.1 1 10 100 1000 0 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS Rev.A 2/3 RB160A30 Diodes 0.1 3 2.5 2 DC 1.5 D=1/2 1 0.5 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 Sin(180) T 0A 0V t Io 3 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 Sin(180) 0A 0V DC Io t T VR D=t/T VR=15V Tj=125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.06 Sin(180) 0.04 D=1/2 DC 0.02 VR D=t/T VR=15V Tj=125 0 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:6.90kV ESD DISPERSION MAP AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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